| PART |
Description |
Maker |
| EN25P05-75GC EN25P05-75GCP EN25P05-75GI EN25P05-75 |
512 Kbit Uniform Sector, Serial Flash Memory
|
Eon Silicon Solution Inc.
|
| EN25LF05 |
512 Kbit Serial Flash Memory with 4Kbytes Uniform Sector
|
Eon Silicon Solution Inc.
|
| AM29F040B-120EI AM29F040B-120FC AM29F040B-120FE AM |
4 Megabit (512 K x 8-Bit) CMOS 5.0 Volt-only/ Uniform Sector Flash Memory
|
Advanced Micro Devices
|
| AM29LV040B-120JD AM29LV040B-60RJD AM29LV040B-70JD |
4 Megabit (512 K x 8-Bit) CMOS 3.0 Volt-only, Uniform Sector 32-Pin Flash Memory 4兆位12亩8位）.0伏的CMOS只，均匀部门32引脚闪存
|
Advanced Micro Devices, Inc.
|
| L2562ML12RI AM29LV2562MH120PII |
512 Megabit (16 M x 32-Bit/32 M x 16-Bit) MirrorBit 3.0 Volt-only Uniform Sector Flash Memory with VersatileI/O Control
|
Advanced Micro Devices
|
| SST29SF040 SST29SF040-55-4C-NH SST29SF040-55-4C-PH |
From old datasheet system
SST29SF512/010/020/040, SST29VF512/010/020/040 512Kbit/ 1Mbit/ 2Mbit/ 4Mbit (x8) Small-Sector Flash
512 Kbit / 1 Mbit / 2 Mbit / 4 Mbit (x8) Small-Sector Flash
|
SST[Silicon Storage Technology, Inc]
SST[Silicon Storage Technology Inc]
|
| M24512-HR M24512-R M24256-BHR M24256-BR M24512-WDW |
64K X 8 I2C/2-WIRE SERIAL EEPROM, PDSO8
512 Kbit and 256 Kbit serial I?C bus EEPROM with three Chip Enable lines
512 Kbit and 256 Kbit serial I虏C bus EEPROM with three Chip Enable lines
512 Kbit and 256 Kbit serial I2C bus EEPROM with three Chip Enable lines
|
STMicroelectronics
|
| AM29F010B-90JI AM29F010B-120EC AM29F010B-120EI AM2 |
1 Mb (128K x 8) Uniform Sector, Flash Memory 128K X 8 FLASH 5V PROM, 90 ns, PQCC32
1 Mb (128K x 8) Uniform Sector, Flash Memory 128K X 8 FLASH 5V PROM, 120 ns, PDSO32
1 Mb (128K x 8) Uniform Sector, Flash Memory 128K X 8 FLASH 5V PROM, 55 ns, PDIP32
|
Advanced Micro Devices, Inc.
|
| AM29LV065MU90RWHI AM29LV065M AM29LV065MU101E AM29L |
64 Megabit (8 M x 8-Bit) MirrorBit 3.0 Volt-only Uniform Sector Flash Memory with VersatileI/O Control 8M X 8 FLASH 3V PROM, 120 ns, PBGA63
64 Megabit (8 M x 8-Bit) MirrorBit 3.0 Volt-only Uniform Sector Flash Memory with VersatileI/O Control 8M X 8 FLASH 3V PROM, 120 ns, PDSO48
64 Megabit (8 M x 8-Bit) MirrorBit 3.0 Volt-only Uniform Sector Flash Memory with VersatileI/O Control 8M X 8 FLASH 3V PROM, 90 ns, PDSO48
64 Megabit (8 M x 8-Bit) MirrorBit 3.0 Volt-only Uniform Sector Flash Memory with VersatileI/O Control 64兆位米8位）的MirrorBit 3.0伏特，只有统一闪存部门与VersatileI / O控制
|
Advanced Micro Devices, Inc.
AMD[Advanced Micro Devices]
|
| AM29LV256MH113R AM29LV256MH123R AM29LV256MH123RPGI |
256 Megabit (16 M x 16-Bit/32 M x 8-Bit) MirrorBitTM 3.0 Volt-only Uniform Sector Flash Memory with VersatileI/O Control
CAP, FILM, 0.22UF, 100V, PPS, 2825,5%,SM
256 Megabit (16 M x 16-Bit/32 M x 8-Bit) MirrorBitTM 3.0 Volt-only Uniform Sector Flash Memory with VersatileI/OTM Control 16M X 16 FLASH 3V PROM, 120 ns, PDSO56
256 Megabit (16 M x 16-Bit/32 M x 8-Bit) MirrorBitTM 3.0 Volt-only Uniform Sector Flash Memory with VersatileI/OTM Control 256兆位6 M中的x 16-Bit/32 M中的x 8位）MirrorBitTM 3.0伏特，只有统一闪存部门与VersatileI /价外控制
|
Advanced Micro Devices, Inc.
|
| LV065MU LV640MB LV640MH LV640ML LV640MT LV640MU LV |
64 Megabit (8 M x 8-Bit) MirrorBit3.0 Volt-only Uniform Sector Flash Memory with VersatileI/OControl 8M X 8 FLASH 3V PROM, 120 ns, PBGA63
64 Megabit (8 M x 8-Bit) MirrorBit3.0 Volt-only Uniform Sector Flash Memory with VersatileI/OControl 64兆位米8位）的MirrorBit.0伏特，只有统一部门闪存记忆体与VersatileI /输出⑩控
64 Megabit (8 M x 8-Bit) MirrorBit3.0 Volt-only Uniform Sector Flash Memory with VersatileI/OControl 8M X 8 FLASH 3V PROM, 110 ns, PBGA63
|
Advanced Micro Devices, Inc.
|
